磁性Salisbury屏的高频响应

研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明，利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性，可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出，具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏，其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关，它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽. 关键词： 磁性Salisbury屏 反射率 频带响应 磁性薄膜     

Ceramic Films via Organometallic Complex as Single Source Precursor

Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.     

不良导体热系数和热体散热率测量方法研究(英文)

本文介绍一种直接测量散热率新方法．进而测出不良导体的热系数。该方法，减小了由间接测量散热率所带来的误差，实验装置简单，操作方便，参数少，测量结果的精确性和重复性都有较大提高，更重要的是这一新的实验方法突出了物理思想。     

Noise-assisted mound coarsening in epitaxial growth

Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)² between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields . Received: 11 November 1997 / Revised in final form: 28 November 1997 / Accepted: 28 November 1997     

Near-barrier fusion reactions induced by α on197Au,193Ir,191Ir,185Re,181Ta,121Sb and69Ga nuclei

Fusion-evaporation cross-sections for the α-induced reactions upon¹⁹⁷Au,¹⁹³Ir,¹⁹¹Ir,¹⁸⁵Re,¹⁸¹Ta,¹²¹Sb and⁶⁹Ga nuclei at bombarding energies near the Coulomb barrier have been measured by off-line observation of the γ-rays emitted in the radioactive decay of the residual nuclei using stacked foil technique. The total fusion cross-section for the systems have been compared with simple statistical model calculations using the code ALICE/91 as well as with the coupled channel calculations that include the β₂ and ν₄ slatic deformations and dynamic couplings of the vibrational/rotational states of the target and the projet tile using the code CCDEF.     

BRD96N光调制吸收增强现象的实验研究

通过光谱响应特性实验和记录／读出图像实验，研究了基因变异型细菌视紫红质（BR_D96N）分子膜对单色光的光调制特性.发现BR_D96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象，且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程，其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系，分析了560nm—600nm范围内出现图像反转的实验现象. 关键词： 细菌视紫红质D96N分子膜 光谱响应 吸收增强现象 图像反转现象     

Au-analyte adducts resulting from single massive gold cluster impacts

Utilizing Au₄₀₀⁴⁺ primary ions produces large molecular ion yields, some in excess of unity, with minimal surface damage. A surprising observation is the occurrence of Au-analyte adducts as part of the ejecta desorbed by a single Au-cluster impact. We present data that demonstrate that Au and Au-adducts as secondary ions (e.g., AuCN⁻, AuGly⁻ and AuCsI⁻) are the result of the interaction between a single primary ion, Au₄₀₀⁴⁺ and the target atoms.     

Dynamic response of permalloy/Cu/Co magnetoresistive sandwiches

The dynamic response of trilayer magnetoresistive permalloy/Cu/Co films was studied by high-frequency permeability spectra measurements. The resonance frequency is shown to depend on the interlayer copper thickness. This dependence is related to exchange coupling between permalloy and cobalt and the interaction field is estimated using the Landau–Lifschitz–Gilbert model.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

氮化铝薄膜的光学性能

分别使用X衍射仪和紫外（190 nm～800 nm）分光光度仪,测量了用分子束外延法生长在SiC（001）基底面上的AIN薄膜的X衍射、透射谱和不同温度下的吸收谱.X衍射表明:实验所用的AIN薄膜在c-轴存在应变和应力，该应变和应力主要是由于AIN的晶格常量与基底SiC的晶格常量不匹配所致.透射谱表明:AIN薄膜的禁带宽度大约为6.2eV；而其对应的吸收谱在6.2eV处存在一个明显的台阶,此台阶被认为是AIN薄膜中的带边自由激子吸收所产生,忽略激子的结合能(与禁带宽度相比),则该值就对应为AIN的禁带宽度.而其对应的不同温度下（10 k～293 k）的吸收谱的谱线的形状和位置无明显的变化表明:温度对AIN薄膜的禁带宽度亦无明显的影响，这主要是由于在AIN薄膜中存在着应力所致.